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2SJ668(TE16L1,NQ)

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2SJ668(TE16L1,NQ)

Toshiba Semiconductor and Storage

Product No:

2SJ668(TE16L1,NQ)

Package:

PW-MOLD

Batch:

-

Datasheet:

pdf

Description:

MOSFET P-CHANNEL 60V 5A PW-MOLD

Delivery:

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Payment:

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2SJ668(TE16L1,NQ) - Product Information

Specification
FAQ
Datasheet
Mfr Toshiba Semiconductor and Storage
Series U-MOSIII
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Obsolete
Vgs(th) (Max) @ Id 2V @ 1mA
Base Product Number 2SJ668
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 170mOhm @ 2.5A, 10V
Power Dissipation (Max) 20W (Tc)
Supplier Device Package PW-MOLD
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Current - Continuous Drain (Id) @ 25°C 5A (Ta)