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630AT

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630AT

Goford Semiconductor

Product No:

630AT

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

N200V,RD(MAX)<250M@10V,RD(MAX)<3

Delivery:

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Payment:

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In Stock : 63

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    0.8265

  • 10

    0.71725

  • 100

    0.496565

  • 500

    0.414884

  • 1000

    0.353096

  • 2000

    0.314478

  • 5000

    0.29792

  • 10000

    0.275861

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630AT - Product Information

Specification
FAQ
Datasheet
Mfr Goford Semiconductor
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Power Dissipation (Max) 83W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)

It is empty.