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BSC091N03MSCGATMA1

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BSC091N03MSCGATMA1

Infineon

Product No:

BSC091N03MSCGATMA1

Manufacturer:

Infineon

Package:

PG-TDSON-8-6

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 1

Delivery:

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Payment:

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In Stock : 24335

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1094

    0.2565

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BSC091N03MSCGATMA1 - Product Information

Specification
FAQ
Datasheet
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 9.1mOhm @ 30A, 10V
Power Dissipation (Max) 2.5W (Ta), 28W (Tc)
Supplier Device Package PG-TDSON-8-6
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 44A (Tc)

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