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BSDH10G65E2

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BSDH10G65E2

Bourns Inc.

Product No:

BSDH10G65E2

Manufacturer:

Bourns Inc.

Package:

TO-220-2

Batch:

-

Datasheet:

pdf

Description:

DIODE SIC 650V 10A TO220-2

Delivery:

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Payment:

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In Stock : 2900

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    2.793

  • 10

    2.3484

  • 100

    1.89981

  • 500

    1.68872

  • 1000

    1.445966

  • 2000

    1.36153

  • 5000

    1.30625

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BSDH10G65E2 - Product Information

Specification
FAQ
Datasheet
Mfr Bourns Inc.
Speed Fast Recovery =< 500ns, > 200mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Capacitance @ Vr, F 323pF @ 1V, 1MHz
Supplier Device Package TO-220-2
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 10A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A