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DMWSH120H90SM4Q

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DMWSH120H90SM4Q

Diodes Incorporated

Product No:

DMWSH120H90SM4Q

Manufacturer:

Diodes Incorporated

Package:

TO-247-4

Batch:

-

Datasheet:

pdf

Description:

SIC MOSFET BVDSS: >1000V TO247-4

Delivery:

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Payment:

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In Stock : 19

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    18.696

  • 10

    16.473

  • 100

    14.246675

  • 500

    12.911032

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DMWSH120H90SM4Q - Product Information

Specification
FAQ
Datasheet
Mfr Diodes Incorporated
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Vgs (Max) +19V, -8V
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Through Hole
Package / Case TO-247-4
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 5mA
Operating Temperature -55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs 97.5mOhm @ 20A, 15V
Power Dissipation (Max) 235W (Tc)
Supplier Device Package TO-247-4
Gate Charge (Qg) (Max) @ Vgs 47.6 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1112 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On) 15V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)