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G3S06504D

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G3S06504D

Global Power Technology-GPT

Product No:

G3S06504D

Package:

TO-263

Batch:

-

Datasheet:

pdf

Description:

DIODE SIL CARB 650V 11.5A TO263

Delivery:

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Payment:

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G3S06504D - Product Information

Specification
FAQ
Datasheet
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Capacitance @ Vr, F 181pF @ 0V, 1MHz
Supplier Device Package TO-263
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 11.5A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A