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G3S06510C

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G3S06510C

Global Power Technology-GPT

Product No:

G3S06510C

Package:

TO-252

Batch:

-

Datasheet:

pdf

Description:

DIODE SIL CARBIDE 650V 34A TO252

Delivery:

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Payment:

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G3S06510C - Product Information

Specification
FAQ
Datasheet
Mfr Global Power Technology-GPT
Speed No Recovery Time > 500mA (Io)
Series -
Package Cut Tape (CT)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status Active
Capacitance @ Vr, F 690pF @ 0V, 1MHz
Supplier Device Package TO-252
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 50 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 34A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 10 A