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GA10JT12-263

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GA10JT12-263

GeneSiC Semiconductor

Product No:

GA10JT12-263

Manufacturer:

GeneSiC Semiconductor

Package:

-

Batch:

-

Datasheet:

pdf

Description:

TRANS SJT 1200V 25A

Delivery:

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Payment:

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GA10JT12-263 - Product Information

Specification
FAQ
Datasheet
Mfr GeneSiC Semiconductor
Series -
Package Tube
FET Type -
Vgs (Max) -
Technology SiC (Silicon Carbide Junction Transistor)
FET Feature -
Mounting Type Surface Mount
Package / Case -
Product Status Obsolete
Vgs(th) (Max) @ Id -
Base Product Number GA10JT12
Operating Temperature 175°C (TJ)
Rds On (Max) @ Id, Vgs 120mOhm @ 10A
Power Dissipation (Max) 170W (Tc)
Supplier Device Package -
Drain to Source Voltage (Vdss) 1200 V
Input Capacitance (Ciss) (Max) @ Vds 1403 pF @ 800 V
Drive Voltage (Max Rds On, Min Rds On) -
Current - Continuous Drain (Id) @ 25°C 25A (Tc)