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M25P16-VMN6TP TR

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M25P16-VMN6TP TR

Micron Technology, Inc.

Product No:

M25P16-VMN6TP TR

Package:

8-SO

Batch:

-

Datasheet:

pdf

Description:

IC FLASH 16MBIT SPI 75MHZ 8SO

Delivery:

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Payment:

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M25P16-VMN6TP TR - Product Information

Specification
FAQ
Datasheet
Mfr Micron Technology Inc.
Series -
Package Tape & Reel (TR)
Technology FLASH - NOR
Memory Size 16Mbit
Memory Type Non-Volatile
Memory Format FLASH
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Product Status Obsolete
Clock Frequency 75 MHz
Memory Interface SPI
Voltage - Supply 2.7V ~ 3.6V
Base Product Number M25P16
Memory Organization 2M x 8
DigiKey Programmable Verified
Operating Temperature -40°C ~ 85°C (TA)
Supplier Device Package 8-SO
Write Cycle Time - Word, Page 15ms, 5ms

M25P16-VMN6TP TR Micron M25P16 Serial Flash Embedded Memory

 

M25P16-VMN6TP TR Features
• SPI bus compatible serial interface
• 16Mb Flash memory
• 75 MHz clock frequency (maximum)
• 2.7V to 3.6V single supply voltage
• Page program (up to 256 bytes) in 0.64ms (TYP)
• Erase capability
– Sector erase: 512Kb in 0.6 s (TYP)
– Bulk erase: 16Mb in 13 s (TYP)
• Write protection
– Hardware write protection: protected area size defined by non-volatile bits BP0, BP1, BP2
• Deep power down: 1µA (TYP)
• Electronic signature
– JEDEC standard 2-byte signature (2015h)
– Unique ID code (UID) and 16 bytes of read-only data, available upon customer request
– RES command, one-byte signature (14h) for backward compatibility
• More than 100,000 write cycles per sector
• More than 20 years data retention
• Automotive grade parts available
• Packages (RoHS compliant)
– SO8N (MN) 150 mils
– SO8W (MW) 208 mils
– SO16 (MF) 300 mils
– VFDFPN8 (MP) MLP8 6mm x 5mm
– VFDFPN8 (ME) MLP8 8mm x 6mm
– UFDFPN8 (MC) MLP8 4mm x 3mm

 

M25P16-VMN6TP TR Functional Description
The M25P16 is an 16Mb (2Mb x 8) serial Flash memory device with advanced write protection mechanisms accessed by a high speed SPI-compatible bus. The device supports high-performance commands for clock frequency up to 75MHz.


The memory can be programmed 1 to 256 bytes at a time using the PAGE PROGRAM command. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Memory can be viewed either as 8,192 pages or as 2,097,152 bytes. The entire memory can be erased using the BULK ERASE command, or it can be erased one sector at a time using the SECTOR ERASE command.


This datasheet details the functionality of the M25P16 device based on 110nm process.