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TK31E60W,S1VX

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TK31E60W,S1VX

Toshiba Semiconductor and Storage

Product No:

TK31E60W,S1VX

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 30.8A TO220

Delivery:

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Payment:

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In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    7.5145

  • 10

    6.43815

  • 100

    5.36484

  • 500

    4.733698

  • 1000

    4.260322

  • 2000

    3.99208

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TK31E60W,S1VX - Product Information

Specification
FAQ
Datasheet
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 1.5mA
Base Product Number TK31E60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 88mOhm @ 15.4A, 10V
Power Dissipation (Max) 230W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)

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