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TK32E12N1,S1X

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TK32E12N1,S1X

Toshiba Semiconductor and Storage

Product No:

TK32E12N1,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 120V 60A TO-220

Delivery:

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Payment:

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In Stock : 155

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.406

  • 10

    1.254

  • 100

    0.977645

  • 500

    0.807614

  • 1000

    0.637583

  • 2000

    0.59508

  • 5000

    0.565326

  • 10000

    0.544074

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TK32E12N1,S1X - Product Information

Specification
FAQ
Datasheet
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 4V @ 500µA
Base Product Number TK32E12
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 13.8mOhm @ 16A, 10V
Power Dissipation (Max) 98W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Drain to Source Voltage (Vdss) 120 V
Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 60 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)

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