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GT080N10T

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GT080N10T

Goford Semiconductor

Product No:

GT080N10T

Manufacturer:

Goford Semiconductor

Package:

TO-220

Batch:

-

Datasheet:

pdf

Description:

N100V, 70A,RD<8M@10V,VTH1.0V~3.0

Delivery:

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Payment:

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In Stock : 62

Minimum: 1 Multiples: 1

Qty

Unit Price

  • 1

    1.444

  • 10

    1.1989

  • 100

    0.95418

  • 500

    0.807424

  • 1000

    0.685083

  • 2000

    0.650836

  • 5000

    0.626364

  • 10000

    0.605625

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GT080N10T - Product Information

Specification
FAQ
Datasheet
Mfr Goford Semiconductor
Series GT
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 8mOhm @ 50A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2257 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)